*rohs directive 2002/95/ec jan 27 2003 including annex july 2005 ?revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISP1120F3D overvoltage protector TISP1120F3D dual forward-conducting unidirectional thyristor overvoltage protector 8-soic package (top view) *rohs compliant ion-implanted breakdown region - precise and stable voltage planar passivated junctions - low off-state current <10 a low voltage overshoot under surge 1 2 3 4 5 6 7 8 mdxx ae b g g g g nc t r nc nc - no internal connection device symbol g t r sd1xaaa description this dual forward-conducting unidirectional overvoltage protector is designed for the overvoltage protection of ics used for th e slic (subscriber line interface circuit) function. the ic line driver section is typically powered with 0 v and a negative supply. t he TISP1120F3D limits voltages that exceed these supply rails. high voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. negative transients are initially limited by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. the high crowbar holding current helps prevent d.c. latchup as the current subsides. positive transients are limited by diode forward conduction. these protectors are designed to suppress and withstand the listed international lightning surges on any terminal pair. this monolithic protection device is fabricated in an ion-implanted planar structure to ensure precise and matched breakover co ntrol, and is virtually transparent to the system in normal operation. how to order rated for international surge wave shapes device package carrier order as marking code standard quantity TISP1120F3D 8-soic embossed tape reeled TISP1120F3Dr-s 1120f3 2500 device name v drm v v (bo) v TISP1120F3D -97 -120 wave shape standard i ppsm a 2/10 gr-1089-core 120 8/20 iec 61000-4-5 70 10/160 tia-968-a 60 10/700 itu-t k.20/21/45 50 10/560 tia-968-a 45 10/1000 gr-1089-core 35
july 2005 ?revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISP1120F3D overvoltage protector absolute maximum ratings, t a = 25 ? (unless otherwise noted) electrical characteristics for terminals t and r, t a = 25 ? (unless otherwise noted) rating symbol value unit repetitive peak off-state voltage v drm -97 v non-repetitive peak impul se current (see note 1) 2/10 s (gr-1089-core, 2/10 s voltage wave shape) 8/20 s (iec 61000-4-5, combination wave generator, 1.2/50 s voltage waveshape) 10/160 s (tia-968-a, 10/160 s voltage wave shape) 5/310 s (itu-t k.44, 10/700 s voltage wave shape used in k.20/21/45) 5/320 s (tia-968-a, 9/720 s voltage waveshape) 10/560 s (tia-968-a, 10/560 s voltage wave shape) 10/1000 s (gr-1089-core, 10/1000 s voltage wave shape) i ppsm 2 x 120 2 x 70 2 x 60 2 x 50 2 x 50 2 x 45 2 x 35 a non-repetitive peak on-state current, 0 c < t a < 70 c 1 s, 50 hz i tsm 2 x 4.3 a initial rate of ri se of on-state current, linear current ramp, maximum ramp value < 38 a di t /dt 250 a/ s junction temperature t j -65 to +150 c storage temperature range t stg -65 to +150 c note: 1. initially the device must be in thermal equilibrium with 0 c < t j < 70 c. the surge may be repeated after the device returns to its initial conditions. electrical characteristics for terminals t and g or r and g, t a = 25 ? (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off-state current v d = v drm t a = 25 c 5 a t a = 70 c 10 v (bo) breakover voltage dv/dt = -250 v/ms, r source = 300 ? 123 v i h holding current i t = 5a, di/dt= 30 ma/ms 150 ma parameter test conditions min typ max unit i drm repetitive peak off-state current v d = v drm t a = 25 c-5 a t a = 70 c -10 v (bo) breakover voltage dv/dt = -250 v/ms, r source = 300 ? -120 v v (bo) impulse breakover voltage dv/dt -1000 v/ s, linear voltage ramp, maximum ramp value = -500 v di/dt -20 a/ s, linear current ramp, maximum ramp value = -10 a -130 v i (bo) breakover current dv/dt = -250 v/ms, r source = 300 ? -100 -600 ma i h holding current i t =-5a, di/dt=+30ma/ms -150 ma v t on-state voltage i t =-5a, t w = 100 s-3v v f forward voltage i f =+5a, t w = 100 s+3v v frm peak forward recovery voltage dv/dt +1000 v/ s, linear voltage ramp, maximum ramp value = +500 v di/dt +20 a/ s, linear current ramp, maximum ramp value = +10 a +3.3 v dv/dt critical rate of rise of off-state volt age linear voltage ramp, maximum ramp value < 0.85v drm -5 kv/ s c o off-state capacitance f = 1 mhz, v d = 1 v rms v d = -2 v 60 65 pf v d = -50 v 20 25
july 2005 ?revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISP1120F3D overvoltage protector thermal characteristics, t a = 25 ? (unless otherwise noted) parameter test conditions min typ max unit r ja junction to ambient thermal resistance p tot = 0.8 w 5 cm 2 fr4 pcb 160 c/w parameter measurement information -v i (br) v (br) v (br)m v drm i drm v d i h i t v t i trm i ppsm v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) i (br) v (br) v (br)m v drm i drm v d i d i h i t v t i trm i ppsm -i quadrant iii switching characteristic i tsm i tsm figure 1. voltage-current characteristic for the terminals t and r all measurements are referenced to terminal r pm-tisp4xxx-001-a
july 2005 ?revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISP1120F3D overvoltage protector parameter measurement information (continued) figure 2. voltage-current characteristic for terminals t and g or r and g all measurements are referenced to terminal g -v i (br) v (br) v (br)m v drm i drm v d i h i t v t i trm i ppsm v (bo) i (bo) i d quadrant i forward conduction characteristic +v +i i f v f i frm i ppsm -i quadrant iii switching characteristic pm-tisp5xxx-001-a i fsm i tsm
?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries. copyright?2005, bourns, inc. litho in u.s.a. e 11/05 tsp0508 bourns sales offices region phone fax the americas: +1-951-781-5500 +1-951-781-5700 europe: +41-41-7685555 +41-41-7685510 asia-pacific: +886-2-25624117 +886-2-25624116 technical assistance region phone fax the americas: +1-951-781-5500 +1-951-781-5700 europe: +41-41-7685555 +41-41-7685510 asia-pacific: +886-2-25624117 +886-2-25624116 www.bourns.com bourns products are available through an extensive network of manufacturer s representatives, agents and distributors. to obtain technical applications assistance, a quotation, or to place an order, contact a bourns representative in your area.
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